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芯片解密W949D6CB功能描述

  新达专业提供各类专用芯片解密、MCU解密、FPGA解密、PLD芯片解密、CPLD芯片解密、ARM芯片解密、软件解密、IC解密等较高难度芯片解密服务。
  Features
  Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
  Data width: x16
  Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
  Standard Self Refresh Mode
  PASR、ATCSR、Power Down Mode、DPD
  Programmable output buffer driver strength
  Four internal banks for concurrent operation
  CAS Latency: 2 and 3
  Burst Length: 2、4 、8 and 16
  Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
  Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
  有W949D6CB芯片解密需求者欢迎与我们联系,我们将为您提供最上乘的服务。

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